SI7137DP Vishay Siliconix, SI7137DP Datasheet

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SI7137DP

Manufacturer Part Number
SI7137DP
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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www.DataSheet.co.kr
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69063
S09-0865-Rev. D, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
8
0.00195 at V
0.0025 at V
0.0039 at V
6.15 mm
D
7
D
R
DS(on)
Si7137DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
D
GS
GS
Bottom View
PowerPAK SO-8
GS
5
(Ω)
= - 2.5 V
J
= - 4.5 V
D
= - 10 V
= 150 °C)
a, c
1
P-Channel 20-V (D-S) MOSFET
S
2
S
I
- 60
- 60
- 60
D
(A)
3
d
d
d
S
5.15 mm
4
e, f
G
A
Q
= 25 °C, unless otherwise noted
183 nC
g
(Typ.)
Steady State
New Product
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Adaptor Switch
• Battery Switch
• Load Switch
Definition
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
S
AS
D
g
stg
Tested
®
Gen III P-Channel Power MOSFET
Typical
0.9
15
G
P-Channel MOSFET
- 55 to 150
- 33.7
- 5.6
6.25
- 42
4.0
Limit
- 100
- 60
- 60
- 60
± 12
66.6
Maximum
- 20
- 50
125
104
260
S
D
a, b
a, b
a, b
a, b
a, b
1.2
d
d
d
Vishay Siliconix
20
Si7137DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI7137DP Summary of contents

Page 1

... PowerPAK SO-8 6. Bottom View Ordering Information: Si7137DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7137DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...

Page 3

... Drain Current ( 160 240 320 400 Gate Charge Si7137DP Vishay Siliconix ° ° 125 ° 0.0 0.6 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 28 000 C iss 22 400 ...

Page 4

... Si7137DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.6 0.8 1.0 1 250 µ 100 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 3.0 2.4 1.8 1.2 0.6 0.0 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7137DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7137DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... TYP. 3.98 TYP. 6.15 6.25 5.89 5.99 3.66 3.84 3.78 3.91 0.75 TYP. 1.27 BSC 1.27 TYP 0.61 0.71 0.61 0.71 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN. NOM. MAX. 0.038 0.041 0.044 0.000 - 0.002 0.013 ...

Page 8

... Under specific conditions of board configuration, copper weight and layer stack, experiments have found that more than about 0.25 to 0.5 in land) will yield little improvement in thermal perfor- mance. Vishay Siliconix Standard SO-8 PowerPAK SO-8 Figure additional copper (in addition to the drain www.vishay.com ...

Page 9

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 24 mils. This matches the spacing of the two drain pads on the Pow- erPAK SO-8 dual package ...

Page 10

... No significant effect was observed. Si7446DP 1 100 10000 Figure 6. Spreading Copper Junction-to-Ambient Performance Vishay Siliconix R vs. Spreading Copper 100 % Back Copper 100 % ...

Page 11

... AN821 Vishay Siliconix SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET r with temperature (Figure 7). DS(on) On-Resistance vs. Junction Temperature 1 1 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J Figure 7. MOSFET r DS(on) A MOSFET generates internal heat due to the current passing through the channel ...

Page 12

... RECOMMENDED MINIMUM PADS FOR PowerPAK 0.024 (0.61) 0.026 (0.66) Return to Index Return to Index Document Number: 72599 Revision: 21-Jan-08 ® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.032 (1.27) (0.82) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix 0.040 (1.02) www.vishay.com 15 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 13

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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