RF1S70N03SM Intersil Corporation, RF1S70N03SM Datasheet - Page 2

• Manufacturer Part Number: RF1S70N03SM
• Description: 70A/ 30V/ 0.010 Ohm/ N-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Reverse Recovery Time
1. T
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Derate Above 25
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
2
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
SYMBOL
SYMBOL
V
C, Unless Otherwise Specified
r
Q
BV
t
Q
DS(ON)
Q
t
d(OFF)
C
C
GS(TH)
R
I
I
d(ON)
C
R
t
g(TOT)
DSS
GSS
t
V
OFF
g(TH)
g(10)
RFP70N03, RF1S70N03SM
OSS
RSS
ON
ISS
DSS
t
t
t
SD
r
f
JC
rr
JA
I
V
V
V
V
I
V
R
R
V
V
V
V
f = 1MHz
(Figure 11)
(Figure 3)
TO-220, TO-263
I
I
D
D
SD
SD
GS
DS
DS
GS
DD
GS
GS
GS
DS
L
GS
= 250 A, V
= 70A, V
= 0.214 , V
= 70A
= 70A, dI
= V
= 30V, V
= 30V, V
= 20V
= 15V, I
= 0V to 20V
= 0V to 10V
= 0V to 2V
= 25V, V
= 2.5
DS
TEST CONDITIONS
TEST CONDITIONS
, I
GS
D
D
SD
GS
GS
GS
GS
= 10V (Figure 8)
= 250 A (Figure 9)
GS
/dt = 100A/ s
70A,
= 0V
= 0V, T
= 0V,
= 0V (Figure 10)
V
R
I
(Figure 12)
g(REF)
10V,
DD
L
J
= 0.343
, T
C
= 24V, I
DGR
DSS
STG
= 150
DM
pkg
= 1.0mA
GS
AS
D
D
L
o
D
C
70A,
MIN
MIN
Figures 5, 13, 14
30
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-55 to 175
200
150
300
260
1.0
30
30
70
20
3300
1750
TYP
TYP
215
120
750
6.5
20
20
40
25
-
-
-
-
-
-
-
-
-
-
-
-
0.010
MAX
MAX
125
100
125
260
145
1.5
8.0
1.0
50
80
62
4
1
-
-
-
-
-
-
-
-
UNITS
W/
UNITS
UNITS
o
o
o
o
o
W
V
V
V
A
A
C/W
C/W
nA
nC
nC
nC
C
C
C
ns
ns
ns
ns
ns
ns
pF
pF
pF
ns
o
V
V
V
A
A
C