RF1S70N03SM Intersil Corporation, RF1S70N03SM Datasheet - Page 12

• Manufacturer Part Number: RF1S70N03SM
• Description: 70A/ 30V/ 0.010 Ohm/ N-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Typical Performance Curves
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
200
160
120
80
40
2.0
1.6
1.2
0.8
0.4
2.0
1.5
1.0
0.5
0
0
-80
0
0
-80
V
FIGURE 6. SATURATION CHARACTERISTICS
GS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
I
GS
D
= 10V
= 250 A
= 10V, I
RESISTANCE vs JUNCTION TEMPERATURE
-40
VOLTAGE vs JUNCTION TEMPERATURE
-40
1.5
V
DS
T
T
D
J
J
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
= 70A
0
0
V
GS
= 8V
3.0
40
40
4
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
= 25
80
80
4.5
o
C
(Continued)
120
120
o
o
C)
RFP70N03, RF1S70N03SM
C)
6.0
160
160
V
V
V
V
GS
GS
GS
GS
= 7V
= 6V
= 5V
= 4V
200
200
7.5
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
200
160
120
7000
6000
5000
4000
3000
2000
1000
80
40
0
0
0
2.0
1.6
1.2
0.8
0.4
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
0
DD
-80
FIGURE 7. TRANSFER CHARACTERISTICS
= 15V
V
GS
JUNCTION TEMPERATURE
-40
= V
2
V
V
5
GS
DS
DS
T
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
, I
, JUNCTION TEMPERATURE (
ISS
OSS
RSS
D
0
= 250 A
4
10
40
80
6
15
V
C
C
C
GS
ISS
RSS
OSS
120
= 0V, f = 1MHz
o
= C
= C
= C
175
C)
8
20
-55
25
GS
GD
DS
o
160
o
o
C
C
C
+ C
+ C
GD
GD
200
10
25