16C6N5 Renesas Technology / Hitachi Semiconductor, 16C6N5 Datasheet - Page 31

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16C6N5

Manufacturer Part Number
16C6N5
Description
Renesas MCU
Manufacturer
Renesas Technology / Hitachi Semiconductor
Datasheet
M16C/6N Group (M16C/6N5)
Rev.2.40
REJ03B0004-0240
Under development
This document is under development and its contents are subject to change.
Table 5.5 Electrical Characteristics (2)
NOTES:
Symbol
I
CC
1. Referenced to VCC = 4.2 to 5.5 V, VSS = 0 V at Topr = –40 to 85°C, f(BCLK) = 20 MHz unless otherwise specified.
2. This indicates the memory in which the program to be executed exists.
3. With one timer operated using fC32.
Aug 25, 2006
Power supply
current
(VCC = 4.2 to 5.5 V)
page 31 of 84
Parameter
In single-chip mode,
the output pins are
open and other pins
are VSS.
(1)
Mask ROM
Flash memory f(BCLK) = 20 MHz,
Flash memory f(BCLK) = 10 MHz,
program
Flash memory f(BCLK) = 10 MHz,
erase
Mask ROM
Flash memory f(BCLK) = 32 kHz,
Mask ROM
Flash memory Wait mode
Measuring Condition
f(BCLK) = 20 MHz,
PLL operation,
No division
On-chip oscillation,
No division
PLL operation,
No division
On-chip oscillation,
No division
VCC = 5 V
VCC = 5 V
f(BCLK) = 32 kHz,
Low power dissipation
mode, ROM
Low power dissipation
mode, RAM
f(BCLK) = 32 kHz,
Low power dissipation
mode,
Flash memory
On-chip oscillation,
f(BCLK) = 32 kHz,
Wait mode
Oscillation capacity High
f(BCLK) = 32 kHz,
Wait mode
Oscillation capacity Low
Stop mode,
Topr = 25°C
(3)
(3)
(2)
(2)
,
,
5. Electric Characteristics (T/V-ver.)
(2)
Min.
Standard
Typ. Max.
420
1.8
8.5
3.0
0.8
15
25
25
25
50
16
18
1
3.0
28
30
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA

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