MCIMX31 Motorola Semiconductor Products, MCIMX31 Datasheet - Page 22

• Manufacturer Part Number: MCIMX31
• Manufacturer: Motorola Semiconductor Products

1
Electrical Characteristics
The i.MX31 I/O parameters appear in
Ranges," on page 13
4.3.2
Figure 4
range of operating conditions appears in
Table 19
22
High-level output voltage
Low-level output voltage
High-level output current
Low-level output current
High-Level DC input voltage
Low-Level DC input voltage
Tri-state leakage current
Use of DDR Drive can result in excessive overshoot and ringing.
depicts the load circuit for outputs.
for DDR I/O (unless otherwise noted).
Output (at I/O)
AC Electrical Characteristics
Parameter
NVCC for
for temperature and supply voltage ranges.
Table 16. DDR (Double Data Rate) I/O DC Electrical Parameters
MCIMX31/MCIMX31L Advance Information, Rev. 3.2
Figure 5. Output Transition Time Waveform
Table 16
Preliminary—Subject to Change Without Notice
CL includes package, probe and fixture capacitance
PA1
Figure 4. Load Circuit for Output
20%
Table 16
80%
From Output
Table 17
refers to NVCC2, NVCC21, and NVCC22.
Under Test
Symbol
Figure 5
V
V
I
V
I
V
I
OH
OL
OZ
OH
OL
IH
IL
for DDR (Double Data Rate). See
NOTE
for slow general I/O,
I
I
V
OH
OL
Test Conditions
I
V
V
depicts the output transition time waveform. The
= NVCC or GND
OH
= specified Drive
OL
I
= specified Drive
I/O = High Z
DDR Drive
DDR Drive
OH
I
High Drive
High Drive
Max Drive
Max Drive
OL
Std Drive
Std Drive
Test Point
=0.8*NVCC
=0.2*NVCC
CL
= –1 mA
= 1 mA
—
—
1
1
PA1
NVCC –0.12
0.8*NVCC
0.7*NVCC
Table 18
–10.8
–14.4
–3.6
–7.2
10.8
14.4
–0.3
Min
3.6
7.2
—
—
—
80%
20%
for fast general I/O, and
NVCC NVCC+0.3
Table 8, "Operating
Typ
NVCC
0V
—
—
—
—
—
—
—
Freescale Semiconductor
0
0.2*NVCC
0.3*NVCC
0.08
Max
±2
—
—
—
—
Units
mA
mA
µA
V
V
V
V
V
V