SPB18P06PG Infineon Technologies Corporation, SPB18P06PG Datasheet - Page 7

• Manufacturer Part Number: SPB18P06PG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Rev 1.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
70
65
60
55
50
AV
2
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
10
20
1
T
t
AV
j
60
[°C]
[µs]
125 °C
100
10
2
100 °C
140
25 °C
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
GS
=f(Q
16
14
12
10
8
6
4
2
0
0
gate
); I
DD
D
=-18.6 A pulsed
10
12 V
Q
gate
30 V
20
[nC]
48 V
SPB18P06P G
30
2008-02-18
40