SPB18P06PG Infineon Technologies Corporation, SPB18P06PG Datasheet - Page 3

• Manufacturer Part Number: SPB18P06PG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Rev 1.3
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
g
rr
V
f =1 MHz
V
10 V, I
R
V
18.6 A, V
T
V
T
V
di
page 3
A
j
GS
DD
DD
GS
R
G
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=2.7 Ω
=0 V, V
=-30 V, V
=-48 V, I
=0 V, I
D
=-13.2 A,
GS
F
F
DS
=0 to -10 V
=18.6 A,
=|I
D
=-25 V,
GS
=-
S
|,
=-
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-5.94
-0.99
typ.
690
230
-4.1
139
5.8
-11
-21
95
12
25
11
70
-
-
SPB18P06P G
max.
-18.6
-74.8
-1.33
16.5
-5.5
860
290
120
105
208
8.7
-17
-28
18
37
-
Unit
pF
ns
nC
V
A
V
ns
nC
2008-02-18
37