LPT16ED SiGe Semiconductor, LPT16ED Datasheet - Page 4

• Manufacturer Part Number: LPT16ED
• Description: 30 GHZ Bipolar Transistor
• Manufacturer: SiGe Semiconductor

Die and Pad Description
Dimensions are relative to the 0,0 cut die corner.
Please refer to Document 01-MS-001 for SiGe’s die inspection criteria.
For S-parameter data, please refer to SiGe Document 07SP001.
38-DST-01 Rev 2.3 Sept 5/02
Feature
Die thickness
X length
Y length
Pad diameter
Pad pitch
Pad/bump height
Pad/bump co-planarity
Pad Center
Collector
Emitter1
Base
Emitter 2
Y length
0,0
Specification
10 mil +/- 1mil
15.3 mil +/- 1mil
14.5 mil +/- 1mil
2.9 mil +/- 0.1mil
6 mil +/- 0.1mil
1 mil +/- 0.05mil
0.2 mil
Position (X mil, Y mil) +/- 0.7mil relative to the 0,0 cut die corner
5, 11
5, 5
11, 5
11, 11
Collector
Emitter1
X length
Emitter2
Base
Comments
Pads are circular.
Pad center to pad centre
30 GHz SiGe Bipolar Transistor
Die edge
LPT16ED
Final
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