LPT16ED SiGe Semiconductor, LPT16ED Datasheet - Page 2
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LPT16ED
Manufacturer Part Number
LPT16ED
Description
30 GHZ Bipolar Transistor
Manufacturer
SiGe Semiconductor
Datasheet
1.LPT16ED.pdf
(5 pages)
Absolute Maximum Ratings
Operation in excess of any one of Absolute Maximum Ratings may result in permanent damage. This is a high
performance RF device with ESD rating < 2keV. Handling and assembly of this device should be done at ESD
protected workstations.
DC Electrical Characteristics
Conditions: T
38-DST-01 Rev 2.3 Sept 5/02
Symbol
Symbol
BV
BV
BV
BV
V
V
V
T
I
I
V
h
CBO
EBO
P
V
CBO
CEO
EBO
I
T
STG
I
BE
FE
C
B
CEO
CBO
CES
EBO
T
A
j
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Base-emitter voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector-base
breakdown voltage
Early voltage
Collector-base cutoff
current
Emitter-base cutoff
current
DC current gain
A
= unless otherwise specified 25 C
Parameter
Parameter
I
Open base
Base-emitter shorted via
100kΩ
I
collector
Open emitter
I
V
V
V
C
E
C
CB
EB
CE
= 100µA, open
= 1µA
= 10mA, V
= 1.5V and I
= 5V and I
= 2V, I
Condition
C
= 20mA
CE
E
= 3V
= 0
C
= 0
Min.
670
100
4.0
2.0
14
14
50
5
Min.
-65
30 GHz SiGe Bipolar Transistor
Typ.
15.0
15.0
687
200
4.5
2.3
10
60
+13.0
+150
+150
Max.
+4.0
+1.5
250
2.0
80
Max.
700
300
100
150
5.0
2.6
16
16
15
LPT16ED
Unit
Unit
mW
mA
mA
mV
pA
µA
V
V
V
V
V
V
V
V
C
C
Final
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