LPT16ED SiGe Semiconductor, LPT16ED Datasheet - Page 2

• Manufacturer Part Number: LPT16ED
• Description: 30 GHZ Bipolar Transistor
• Manufacturer: SiGe Semiconductor

Absolute Maximum Ratings
Operation in excess of any one of Absolute Maximum Ratings may result in permanent damage. This is a high
performance RF device with ESD rating < 2keV. Handling and assembly of this device should be done at ESD
protected workstations.
DC Electrical Characteristics
Conditions: T
38-DST-01 Rev 2.3 Sept 5/02
Symbol
Symbol
BV
BV
BV
BV
V
V
V
T
I
I
V
h
CBO
EBO
P
V
CBO
CEO
EBO
I
T
STG
I
BE
FE
C
B
CEO
CBO
CES
EBO
T
A
j
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Base-emitter voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector-base
breakdown voltage
Early voltage
Collector-base cutoff
current
Emitter-base cutoff
current
DC current gain
A
= unless otherwise specified 25 C
Parameter
Parameter
I
Open base
Base-emitter shorted via
100kΩ
I
collector
Open emitter
I
V
V
V
C
E
C
CB
EB
CE
= 100µA, open
= 1µA
= 10mA, V
= 1.5V and I
= 5V and I
= 2V, I
Condition
C
= 20mA
CE
E
= 3V
= 0
C
= 0
Min.
670
100
4.0
2.0
14
14
50
5
Min.
-65
30 GHz SiGe Bipolar Transistor
Typ.
15.0
15.0
687
200
4.5
2.3
10
60
+13.0
+150
+150
Max.
+4.0
+1.5
250
2.0
80
Max.
700
300
100
150
5.0
2.6
16
16
15
LPT16ED
Unit
Unit
mW
mA
mA
mV
pA
µA
V
V
V
V
V
V
V
V
C
C
Final
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