MCH5834 Sanyo Semiconductor Corporation, MCH5834 Datasheet - Page 2

• Manufacturer Part Number: MCH5834
• Description: Mosfet : N-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm (typ)
7021A-008
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
5
1
5
1
0.65
Parameter
2.0
2
2
4
3
3
4
0.3
0.15
1 :
2 :
3 :
4 :
5 :
SANYO : MCPH5
Gate
Source
Anode
Cathode
Drain
0 to 0.02
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
V F 1
V F 2
yfs
Qg
V R
I R
t rr
C
t r
t f
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS =8V, V DS =0V
V DS =10V, I D =100 A
V DS =10V, I D =350mA
I D =350mA, V GS =4V
I D =200mA, V GS =2.5V
I D =10mA, V GS =1.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4V, I D =700mA
V DS =10V, V GS =4V, I D =700mA
V DS =10V, V GS =4V, I D =700mA
I S =700mA, V GS =0V
I R =0.5mA
I F =0.3A
I F =0.5A
V R =15V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
MCH5834
Conditions
Electrical Connection
5
1
2
4
3
min
0.45
0.4
30
15
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view
Ratings
typ
0.93
0.37
0.42
0.8
0.7
0.8
1.6
3.5
0.4
0.2
30
10
13
7
8
6
8
1
max
1.15
0.42
0.47
120
1.3
0.9
2.4
1.2
No. A0558-2/6
10
1
1
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V
V
A
A
A