MCH5834 Sanyo Semiconductor Corporation, MCH5834 Datasheet

MCH5834

Manufacturer Part Number

MCH5834

Description

Mosfet : N-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH5834.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MCH5834

Manufacturer:

SANYO/三洋

Quantity:

20 000

Current page: 1 of 6
Download datasheet (45Kb)

Ordering number : ENA0558

MCH5834

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Marking : XY

(*1) : Note, when designing a circuit using this it has a gate (oxide film) protection diode connected only between its gate and source.

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage (*1)

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[SBD]

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

•

[MOSFET]

•

[SBD]

•

Composite type with an N-channel silicon MOSFET (MCH3435) and a schottky barrier diode (SS0503SH)

contained in one package facilitating high-density mounting.

Low ON-resistance.

Ultrahigh-speed switching.

1.5V drive.

Short reverse recovery time.

Low forward voltage.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Symbol

V RRM

V RSM

V GSS

V DSS

I FSM

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

General-Purpose Switching Device

Applications

Tstg

I DP

Tch

P D

I D

I O

SANYO Semiconductors

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

50Hz sine wave, 1 cycle

MCH5834

Conditions

0.8mm) 1unit

DATA SHEET

N0806PE SY IM TC-00000259

Ratings

--55 to +125

150

0.7

2.8

0.6

0.5

No. A0558-1/6

Unit

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