Si7946DP Vishay Intertechnology, Si7946DP Datasheet - Page 2

• Manufacturer Part Number: Si7946DP
• Description: Dual N-channel 150-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7946DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
10
b
8
6
4
2
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
- Drain-to-Source Voltage (V)
V
a
a
J
GS
2
= 25_C UNLESS OTHERWISE NOTED)
= 10 thru 6 V
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
5 V
4 V
New Product
5
V
V
I
DS
DS
D
^ 1 A, V
I
= 120 V, V
= 75 V, V
F
V
V
V
V
V
V
V
V
V
DS
= 2.9 A, di/dt = 100 A/ms
I
DS
DS
DS
Test Condition
GS
S
DS
DD
DD
GS
= 2.9 A, V
= 0 V, V
= V
= 120 V, V
w 5 V, V
= 10 V, I
= 15 V, I
= 75 V, R
= 75 V, R
= 6 V, I
GEN
f = 1MHz
GS
GS
GS
, I
= 10 V, R
= 10 V, I
GS
D
= 0 V, T
D
GS
D
GS
D
= 250 mA
L
L
GS
= "20 V
= 3.3 A
= 3.1 A
= 3.3 A
= 75 W
= 75 W
= 10 V
= 0 V
= 0 V
10
D
J
G
8
6
4
2
0
= 55_C
= 3.3 A
= 6 W
0
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
10
2
T
C
= 125_C
3
25_C
0.124
0.137
Typ
0.87
12.6
2.8
4.5
3.5
15
30
20
62
11
9
S-31361—Rev. A, 30-Jun-03
Document Number: 72282
4
"100
Max
0.150
0.168
100
4.0
1.2
20
20
25
45
30
1
5
5
-55_C
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
6