Si7946DP Vishay Intertechnology, Si7946DP Datasheet

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Si7946DP

Manufacturer Part Number

Si7946DP

Description

Dual N-channel 150-V (D-S) MOSFET

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7946DP.pdf (5 pages)

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Notes

a.

Document Number: 72282

S-31361—Rev. A, 30-Jun-03

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

Single Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

150

150

(V)

J

8

D1

6.15 mm

ti

Ordering Information: Si7946DP-T1

7

D1

t A bi

PowerPAK SO-8

6

D2

Bottom View

5

J

J

a

a

0.150 @ V

= 150_C)

= 150_C)

t

0.168 @ V

a

a

D2

Parameter

Parameter

r

DS(on)

Dual N-Channel 150-V (D-S) MOSFET

1

a

a

S1

GS

GS

(W)

2

= 10 V

= 6 V

G1

a

3

S2

5.15 mm

4

G2

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

L = 0.1 mH

T

T

T

T

t v 10 sec

A

A

A

A

I

New Product

= 25_C

= 70_C

= 25_C

= 70_C

D

3.3

3.1

(A)

G

1

Symbol

Symbol

N-Channel MOSFET

FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr Package

D Dual MOSFET for Space Savings

D PWM Optimized for Fast Switching

D Avalanche Rated

APPLICATIONS

D Primary Side Switch

T

R

R

R

V

V

J

E

I

I

P

P

, T

DM

thJC

I

I

I

AS

thJA

DS

GS

D

D

S

AS

D

D

stg

D

S

1

1

10 secs

Typical

3.3

2.6

2.9

3.5

2.2

3.2

26

60

-55 to 150

"20

G

150

10

9

4

2

Steady State

N-Channel MOSFET

Maximum

Vishay Siliconix

2.1

1.7

1.2

1.4

0.9

4.2

35

85

D

S

2

2

Si7946DP

www.vishay.com

Unit

Unit

_C/W

C/W

mJ

_C

W

W

V

V

A

1

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