Si7943DP Vishay Intertechnology, Si7943DP Datasheet - Page 3

• Manufacturer Part Number: Si7943DP
• Description: P-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71629
S-04438—Rev. B, 13-Aug-01
0.075
0.060
0.045
0.030
0.015
0.000
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
GS
= 9.4 A
0.2
10
On-Resistance vs. Drain Current
= 15 V
= 2.5 V
6
V
SD
Q
g
– Source-to-Drain Voltage (V)
I
0.4
– Total Gate Charge (nC)
D
20
– Drain Current (A)
T
Gate Charge
12
J
= 150_C
0.6
30
18
0.8
40
V
V
GS
GS
T
= 4.5 V
24
J
= 10 V
= 25_C
1.0
50
_
1.2
30
60
New Product
4500
3600
2700
1800
0.10
0.08
0.06
0.04
0.02
0.00
900
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
I
–25
D
GS
= 9.4 A
= 10 V
2
6
T
V
V
0
C
J
GS
DS
– Junction Temperature (_C)
oss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
Vishay Siliconix
C
50
= 9.4 A
iss
18
6
75
Si7943DP
100
24
www.vishay.com
8
125
150
10
30
3