Si7943DP Vishay Intertechnology, Si7943DP Datasheet
Si7943DP
Manufacturer Part Number
Si7943DP
Description
P-channel 30-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7943DP.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7943DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71629
S-04438—Rev. B, 13-Aug-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
–30
(V)
8
D1
6.15 mm
7
D1
6
PowerPAKt SO-8
D2
Bottom View
0.030 @ V
0.045 @ V
0.025 @ V
5
J
a
= 150_C)
D2
a
r
Parameter
Parameter
DS(on)
_
Dual P-Channel 30-V (D-S) MOSFET
1
GS
GS
GS
a
a
S1
= –4.5 V
= –2.5 V
= –10 V
(W)
2
G1
a
3
S2
5.15 mm
4
G2
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
–9.4
–8.6
–7.0
= 25_C
= 70_C
= 25_C
= 70_C
(A)
_
G
Symbol
Symbol
1
T
R
R
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
D 1–2 Cell Li-Ion Battery Switch
D Bus Load Switch for Notebook/Desktop Computers
J
V
V
I
P
, T
thJC
DM
thJA
I
I
P-Channel MOSFET
GS
DS
D
S
D
Package with Low 1.07-mm Profile
stg
D
S
1
1
10 secs
Typical
–9.4
–7.5
–2.9
3.5
2.2
2.2
26
60
–55 to 150
"12
G
–30
–30
2
Steady State
P-Channel MOSFET
Maximum
Vishay Siliconix
–6.0
–4.8
–1.2
1.4
0.9
2.7
35
85
S
D
2
2
Si7943DP
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
V
A
1
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