Si7942DP Vishay Intertechnology, Si7942DP Datasheet - Page 3

• Manufacturer Part Number: Si7942DP
• Description: Dual N-channel 100-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72118
S-03373—Rev. A, 03-Mar-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.08
0.06
0.04
0.02
0.00
10
40
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.9 A
0.2
On-Resistance vs. Drain Current
= 50 V
4
4
V
SD
Q
g
V
- Source-to-Drain Voltage (V)
I
0.4
GS
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
= 6 V
8
8
T
J
= 150_C
0.6
12
12
0.8
V
GS
T
J
= 10 V
16
16
= 25_C
1.0
1.2
20
20
1500
1200
0.12
0.10
0.08
0.06
0.04
0.02
0.00
900
600
300
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
10
GS
= 5.9 A
= 10 V
C
I
D
2
oss
T
= 1 A
V
V
20
0
J
DS
GS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
30
25
Capacitance
4
C
iss
Vishay Siliconix
C
40
50
rss
I
D
= 5.9 A
6
50
75
Si7942DP
100
60
www.vishay.com
8
125
70
150
10
80
3