Si7942DP Vishay Intertechnology, Si7942DP Datasheet - Page 2

• Manufacturer Part Number: Si7942DP
• Description: Dual N-channel 100-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7942DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
b
8
4
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
- Drain-to-Source Voltage (V)
V
GS
a
a
J
= 10 thru 6 V
2
= 25_C UNLESS OTHERWISE NOTED)
3 V
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
5 V
4 V
5
V
V
I
D
DS
DS
^ 1 A, V
I
=50 V, V
F
V
= 80 V, V
V
V
V
V
V
V
V
V
DS
= 2.9 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
GS
S
DS
DS
DD
DD
GS
= 2.9 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 15 V, I
= 80 V, V
= 50 V, R
= 50 V, R
= 6 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 10 V, I
GS
= 0 V, T
D
D
GS
D
GS
GS
D
= 250 mA
L
L
= "20 V
= 5.9 A
= 5.5 A
= 5.9 A
= 50 W
= 50 W
= 10 V
= 0 V
= 0 V
D
J
20
16
12
G
8
4
0
= 55_C
= 5.9 A
= 6 W
0
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
20
2
T
25_C
C
= 125_C
3
0.041
0.048
Typ
0.77
3.8
5.5
2.2
14
16
15
15
35
20
50
S-03373—Rev. A, 03-Mar-03
Document Number: 72118
4
"100
Max
0.049
0.060
4.0
1.2
24
25
25
55
30
75
-55_C
1
5
5
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
6