Si7925DN Vishay Intertechnology, Si7925DN Datasheet - Page 2

• Manufacturer Part Number: Si7925DN
• Description: Dual P-channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7925DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
b
8
4
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
- Drain-to-Source Voltage (V)
2
a
J
V
= 25_C UNLESS OTHERWISE NOTED)
GS
= 5 thru 2.5 V
3
Symbol
1.5 V
4
2 V
1 V
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
5
New Product
V
I
6
V
DS
D
DS
^ - 1 A, V
= - 6 V, V
I
V
F
V
= - 12 V, V
V
V
V
V
V
DS
GS
= - 2.1 A, di/dt = 100 A/ms
GS
GS
I
DS
V
S
V
V
DS
DS
Test Condition
DD
DD
DS
v - 5 V, V
= - 2.1 A, V
= - 4.5 V, I
= V
= - 2.5 V, I
= - 1.8 V, I
= - 12 V, V
= - 6 V, I
= - 6 V, R
= - 6 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
GS
D
GS
= - 250 mA
D
D
D
GS
GS
= - 6.5 A
L
L
= - 5.5 A
= - 1.2 A
= - 6.5 A
= - 4.5 V
= 6 W
= 6 W
= "8 V
= 0 V
= 0 V
J
D
20
16
12
= 85_C
G
8
4
0
= - 6.5 A
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
Min
- 0.40
- 20
- Gate-to-Source Voltage (V)
1.0
0.033
0.046
0.065
Typ
- 0.8
1.7
2.8
8.2
19
20
50
70
50
41
11
S-31614—Rev. A, 11-Aug-03
1.5
Document Number: 72343
25_C
T
C
= - 55_C
"100
Max
0.042
0.058
0.082
- 1.0
- 1.2
105
12
30
75
75
80
- 1
- 5
2.0
125_C
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
W
2.5