Si7925DN Vishay Intertechnology, Si7925DN Datasheet
Si7925DN
Manufacturer Part Number
Si7925DN
Description
Dual P-channel 12-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7925DN.pdf
(5 pages)
Notes
a.
Document Number: 72343
S-31614—Rev. A, 11-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 12
(V)
J
8
D1
3.30 mm
ti
7
D1
t A bi
6
PowerPAK 1212-8
D2
Bottom View
0.058 @ V
0.082 @ V
0.042 @ V
5
J
J
a
a
= 150_C)
= 150_C)
t
D2
a
a
r
Parameter
Parameter
DS(on)
Dual P-Channel 12-V (D-S) MOSFET
1
GS
GS
GS
a
a
S1
= - 2.5 V
= - 1.8 V
= - 4.5 V
(W)
2
G1
a
3
Ordering Information: Si7925DN-T1
S2
3.30 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
- 6.5
- 5.5
- 1.2
= 25_C
= 85_C
= 25_C
= 85_C
(A)
Symbol
Symbol
T
R
R
R
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D New Low Thermal Resistance PowerPAKr Package
D Advanced High Cell Density Process
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
D Bi-Directional Switch
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
G
stg
1
P-Channel MOSFET
10 secs
S
D
Typical
1
1
- 6.5
- 4.7
- 2.1
2.5
1.5
5.6
40
75
- 55 to 150
- 12
"8
- 20
Steady State
Maximum
G
Vishay Siliconix
2
0.69
- 4.8
- 3.4
- 1.1
P-Channel MOSFET
1.3
50
94
7
Si7925DN
S
D
2
2
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1
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