Si7911DN Vishay Intertechnology, Si7911DN Datasheet - Page 3

• Manufacturer Part Number: Si7911DN
• Description: Dual P-channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72340
S-31612—Rev. A, 11-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
= 5.7 A
0.2
On-Resistance vs. Drain Current
= 10 V
2
= 1.8 V
4
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
I
= 150_C
0.4
D
- Total Gate Charge (nC)
4
- Drain Current (A)
Gate Charge
8
0.6
6
12
V
0.8
GS
8
T
= 2.5 V
V
J
GS
= 25_C
16
1.0
= 4.5 V
10
1.2
20
12
New Product
1500
1200
0.20
0.16
0.12
0.08
0.04
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
C
D
On-Resistance vs. Junction Temperature
rss
V
I
= 1.1 A
D
- 25
GS
= 5.7 A
= 4.5 V
1
4
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
I
2
8
D
= 5.7 A
C
Vishay Siliconix
oss
50
C
iss
12
3
75
Si7911DN
100
16
www.vishay.com
4
125
150
20
5
3