Si7911DN Vishay Intertechnology, Si7911DN Datasheet - Page 2

• Manufacturer Part Number: Si7911DN
• Description: Dual P-channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7911DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
b
8
4
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
- Drain-to-Source Voltage (V)
a
J
V
2
= 25_C UNLESS OTHERWISE NOTED)
GS
= 5 thru 2.5 V
3
Symbol
1.5 V
2 V
1 V
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
4
New Product
V
5
I
V
DS
D
DS
^ - 1 A, V
= - 6 V, V
I
V
F
V
= - 16 V, V
V
V
V
V
V
V
V
DS
GS
= - 2.1 A, di/dt = 100 A/ms
GS
GS
I
DS
V
S
DS
DS
DD
DD
Test Condition
DS
v - 5 V, V
= - 2.3 A, V
= - 4.5 V, I
= V
= - 2.5 V, I
= - 1.8 V, I
= - 16 V, V
= - 6 V, I
= - 10 V, R
= - 10 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
GS
D
GS
= - 250 mA
D
D
D
GS
GS
= - 5.7 A
L
L
= - 5.0 A
= - 1.1 A
= - 5.7 A
= - 4.5 V
= 10 W
= 10 W
= "8 V
= 0 V
= 0 V
J
D
20
16
12
= 85_C
G
8
4
0
= - 5.7 A
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
Min
- 0.40
- 20
- Gate-to-Source Voltage (V)
1.0
1.5
0.040
0.054
0.075
T
Typ
- 0.8
9.5
1.6
2.5
7.2
14
20
35
70
40
25
C
25_C
= - 55_C
S-31612—Rev. A, 11-Aug-03
Document Number: 72340
2.0
"100
Max
0.051
0.067
0.094
- 1.0
- 1.2
105
15
30
55
60
50
- 1
- 5
125_C
2.5
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
W
3.0