Si7900EDN Vishay Intertechnology, Si7900EDN Datasheet
Si7900EDN
Manufacturer Part Number
Si7900EDN
Description
Common Drain Dual N-channel 20-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7900EDN.pdf
(5 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
Si7900EDN-T1
Manufacturer:
AMP
Quantity:
1 498
Company:
Part Number:
Si7900EDN-T1-E3
Manufacturer:
SHARP
Quantity:
40
Notes
a.
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
DS
20
(V)
8
3.30 mm
D
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
7
D
6
D
PowerPAKt 1212-8
Bottom View
5
J
a
0.026 @ V
0.031 @ V
0.039 @ V
= 150_C)
D
a
Parameter
Parameter
r
DS(on)
_
1
a
S1
GS
GS
GS
(W)
2
= 4.5 V
= 2.5 V
= 1.8 V
G1
a
3
S2
3.30 mm
4
G2
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 85_C
= 25_C
= 85_C
D
G
9
8
7
(A)
1
_
Symbol
Symbol
2.4 kW
T
R
R
V
J
V
I
N-Channel
P
DM
, T
thJC
I
I
thJA
DS
GS
D
S
D
stg
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPakt Package
D 3000-V ESD Protection
D Protection Switch for 1-2 Li-ion Batteries
– Low-Thermal Resistance, R
– Low 1.07-mm Profile
S
10 secs
Typical
D
1
6.4
2.9
3.2
1.7
1.9
30
65
9
–55 to 150
"12
20
30
G
2
Steady State
Maximum
Vishay Siliconix
0.79
4.3
1.4
1.5
2.4
38
82
6
2.4 kW
Si7900EDN
N-Channel
thJC
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
V
A
S
D
2
1
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