SI7900 Vishay Intertechnology, SI7900 Datasheet
SI7900
Manufacturer Part Number
SI7900
Description
Specification Comparison
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7900.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7900AEDN-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7900AEDN-T1-E3
Manufacturer:
VISHAY
Quantity:
4 189
Part Number:
SI7900AEDN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7900AEDN-T1-GE3
Manufacturer:
I-PEX
Quantity:
1 001
Company:
Part Number:
SI7900EDN-T1
Manufacturer:
AMP
Quantity:
1 498
Company:
Part Number:
SI7900EDN-T1-E3
Manufacturer:
SHARP
Quantity:
40
Description: Dual N-Channel, 20-V (D-S) MOSFET with Common Drain
Package:
Pin Out:
Part Number Replacements:
Summary of Performance:
The Si7900AEDN is the replacement for the original Si7900EDN; both parts perform identically including limits to the
parametric tables below.
Document Number: 72907
22-Mar-04
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
SPECIFICATIONS (T
Static
Gate-Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Time
Turn-On Time
Turn Off Time
Turn-Off Time
Si7900AEDN-T1 Replaces Si7900EDN-T1
Si7900AEDN-T1—E3 (Lead Free version) Replaces Si7900EDN-T1
S
O
PowerPAKr 1212
Identical
Parameter
Parameter
J
= 25 _C UNLESS OTHERWISE NOTED)
V
V
V
V
V
V
T
T
T
T
GS
GS
GS
GS
GS
GS
A
A
A
A
Si7900AEDN vs. Si7900EDN
= 25_C
= 85_C
= 25_C
= 85_C
= 4.5 V
= 4.5 V
= 4.5 V
= 2.5 V
= 1.8 V
= 12 V
A
Symbol
= 25 _C UNLESS OTHERWISE NOTED)
Symbol
T
r
V
j
I
Ds(on)
Ds(on)
t
t
I
I
I
D(on)
V
Qgs
Qgd
d(on)
d(off)
GSS
GSS
DSS
and T
R
G(th)
Qg
g
V
V
t
I
SD
t
P
P
fs
r
f
I
I
DM
thJA
I
GS
DS
D
D
S
D
D
stg
Min
Si7900AEDN
0.4
20
−55 to 150
"12
Si7900AEDN
8.5
6.4
2.9
2.9
3.1
20
30
40
0.020
0.022
0.026
Typ
0.65
10.5
0.85
4.29
1.9
1.8
1.3
8.6
25
Specification Comparison
Max
0.026
0.030
0.036
"10
1.25
Si7900EDN
"1
0.9
1.1
2.0
6.5
16
13
1
−55 to 150
"12
6.4
2.9
3.2
1.7
20
30
38
9
Min
0.4
20
Vishay Siliconix
Si7900EDN
0.020
0.025
0.031
Typ
0.65
12.5
2.7
2.7
0.7
1.3
5.5
5.5
25
Unit
_C/W
_C
V
V
W
W
A
A
Max
0.026
0.031
0.039
"10
"1
1.1
1.0
2.0
8.0
8.0
www.vishay.com
18
1
Unit
mA
nC
mA
mA
ms
ms
W
W
V
A
S
V
1
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