SI7958DP Vishay Intertechnology, SI7958DP Datasheet - Page 3

• Manufacturer Part Number: SI7958DP
• Description: Dual N-channel 40-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Document Number: 72661
S-32677—Rev. A, 29-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
40
10
8
6
4
2
0
1
0.0
0.0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 11.3 A
0.2
On-Resistance vs. Drain Current
= 20 V
8.0
10
V
SD
Q
V
g
GS
− Source-to-Drain Voltage (V)
I
0.4
D
− Total Gate Charge (nC)
= 4.5 V
T
− Drain Current (A)
16.0
Gate Charge
J
20
= 150_C
0.6
24.0
30
0.8
V
GS
T
32.0
J
= 10 V
40
= 25_C
1.0
40.0
1.2
50
New Product
4000
3500
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
−25
GS
= 11.3 A
= 10 V
C
2
8
oss
T
V
V
0
J
DS
GS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
16
4
C
Vishay Siliconix
iss
C
50
rss
I
D
24
= 11.3 A
6
75
Si7958DP
100
32
www.vishay.com
8
125
150
10
40
3