SI7958DP Vishay Intertechnology, SI7958DP Datasheet
SI7958DP
Manufacturer Part Number
SI7958DP
Description
Dual N-channel 40-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7958DP.pdf
(5 pages)
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Notes
a.
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
40
40
(V)
J
8
D1
6.15 mm
ti
Ordering Information: Si7958DP-T1—E3 (Lead Free)
7
D1
t A bi
PowerPAK SO-8
6
D2
Bottom View
J
J
5
a
a
0.0165 @ V
0.020 @ V
= 150_C)
= 150_C)
t
D2
a
a
Parameter
Parameter
r
DS(on)
Dual N-Channel 40-V (D-S) MOSFET
1
a
a
S1
GS
GS
(W)
2
= 4.5 V
= 10 V
G1
a
3
S2
5.15 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
11.3
10.3
(A)
G
1
Symbol
Symbol
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Dual MOSFET for Space Savings
APPLICATIONS
D Automotive*
*Contact factory for automotive qualification
T
R
R
R
J
V
V
E
I
I
P
P
, T
I
I
DM
thJA
thJC
I
AS
GS
DS
AS
D
D
S
D
D
− 12-V Boardnet
− Motor Drives
− High-Side Switch
stg
D
S
1
1
10 secs
Typical
11.3
9.0
2.9
3.5
2.2
2.2
26
60
−55 to 150
"20
G
40
40
35
61
2
Steady State
N-Channel MOSFET
Maximum
Vishay Siliconix
7.2
5.8
1.2
1.4
0.9
2.7
35
85
D
S
2
2
Si7958DP
www.vishay.com
Unit
_C/W
Unit
C/W
mJ
_C
W
W
V
V
A
1
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