Si7145DP Vishay Intertechnology, Si7145DP Datasheet - Page 4

• Manufacturer Part Number: Si7145DP
• Manufacturer: Vishay Intertechnology

Si7145DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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4
0.001
- 0.1
- 0.4
0.01
100
0.8
0.5
0.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
0
J
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
T
75
J
0.8
= 25 °C
0.01
100
0.1
10
100
Limited by R
1
0.01
I
D
1.0
* V
= 5 mA
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
DS(on)
V
150
1.2
DS
0.1
Safe Operating Area
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.015
0.012
0.009
0.006
0.003
0.000
200
160
120
80
40
10
0
0
0 .
is specified
0
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
S09-0872-Rev. A, 18-May-09
5
Document Number: 64814
6
7
1
T
I
T
J
D
8
J
= 125 °C
= 25 A
= 25 °C
9
10
1
0