SI7114ADN Vishay Intertechnology, SI7114ADN Datasheet - Page 4

• Manufacturer Part Number: SI7114ADN
• Description: N-channel 30-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Si7114ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
2.3
2.0
1.7
1.4
1.1
0.8
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
J
V
= 150 °C
0.3
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
J
25
- Temperature (°C)
I
D
0.6
= 250 µA
50
75
0.01
100
0.1
10
T
1
100
J
0.1
0.9
= 25 °C
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
125
A
GS
= 25 °C
> minimum V
V
150
DS
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
BVDSS Limited
0.020
0.015
0.010
0.005
0.000
10
DS(on)
60
50
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
4
V
100
GS
- Gate-to-Source Voltage (V)
0.1
8
Time (s)
1
S-82616-Rev. B, 03-Nov-08
Document Number: 68932
12
10
T
J
T
J
= 25 °C
16
= 125 °C
100
1000
20