SI7114ADN Vishay Intertechnology, SI7114ADN Datasheet - Page 3

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SI7114ADN

Manufacturer Part Number
SI7114ADN
Description
N-channel 30-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68932
S-82616-Rev. B, 03-Nov-08
0.012
0.009
0.006
0.003
60
45
30
15
10
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 18 A
V
4
GS
20
2
V
= 10 thru 4 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
V
g
V
GS
I
V
8
D
- Total Gate Charge (nC)
GS
DS
Gate Charge
- Drain Current (A)
= 4.5 V
40
4
= 10 V
= 15 V
12
60
6
V
16
DS
V
= 24 V
GS
80
8
= 3 V
20
100
10
24
1600
1200
800
400
1.8
1.5
1.2
0.9
0.6
4
3
2
1
0
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
I
- 25
D
= 18 A
0.6
6
V
V
GS
Transfer Characteristics
DS
T
0
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
T
Capacitance
25
C
1.2
12
= 125 °C
T
T
C
C
C
V
C
50
Vishay Siliconix
= 25 °C
oss
= - 55 °C
GS
iss
= 10 V
Si7114ADN
1.8
18
75
V
www.vishay.com
GS
100
2.4
24
= 4.5 V
125
3.0
150
30
3

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