SI7192DP Vishay Intertechnology, SI7192DP Datasheet - Page 4

• Manufacturer Part Number: SI7192DP
• Description: N-channel 30-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Si7192DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.3
- 0.6
- 0.9
- 1.2
0.01
100
0.6
0.3
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
75
I
0.8
D
T
J
= 250 µA
0.01
= 25 °C
100
0.1
100
10
0.01
1
Limited by R
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
= 5 mA
125
GS
New Product
> minimum V
V
150
1.2
Single Pulse
DS(on)
0.1
DS
T
A
- Drain-to-Source Voltage (V)
= 25 °C
*
GS
at which R
1
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
100
-- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S-80790-Rev. B, 14-Apr-08
T
T
Document Number: 69815
A
A
= 25 °C
= 125 °C
6
1
I
D
8
= 20 A
10
1
0