SI7192DP Vishay Intertechnology, SI7192DP Datasheet - Page 3

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SI7192DP

Manufacturer Part Number
SI7192DP
Description
N-channel 30-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet

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Quantity
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69815
S-80790-Rev. B, 14-Apr-08
0.0024
0.0022
0.0020
0.0018
0.0016
0.0014
70
56
42
28
14
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
V
V
= 20 A
GS
GS
0.5
20
20
V
= 4.5 V
= 10 V
DS
V
Q
Output Characteristics
GS
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
I
= 10 thru 3 V
D
= 15 V
Gate Charge
- Drain Current (A)
1.0
40
40
V
DS
= 10 V
1.5
60
60
V
DS
2.0
80
80
= 20 V
New Product
100
100
2.5
7500
6000
4500
3000
1500
1.7
1.5
1.3
1.1
0.9
0.7
5
4
3
2
1
0
0
- 50
0
0
C
I
On-Resistance vs. Junction Temperature
D
rss
- 25
= 20 A
T
C
5
T
V
C
= 125 °C
1
V
C
DS
C
= 25 °C
GS
Transfer Characteristics
T
oss
iss
0
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
10
Capacitance
25
2
15
50
Vishay Siliconix
T
C
3
75
= - 55 °C
V
Si7192DP
20
GS
www.vishay.com
= 10 V
100
V
GS
4
25
= 4.5 V
125
150
30
5
3

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