ADP3120 Analog Devices, ADP3120 Datasheet - Page 9

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ADP3120

Manufacturer Part Number
ADP3120
Description
Dual Bootstrapped 12 V MOSFET Driver
Manufacturer
Analog Devices
Datasheet

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THEORY OF OPERATION
The ADP3120 is optimized for driving two N-channel
MOSFETs in a synchronous buck converter topology. A single
PWM input signal is all that is required to properly drive the
high-side and the low-side MOSFETs. Each driver is capable of
driving a 3 nF load at speeds up to 500 kHz.
A more detailed description of the ADP3120 and its features
follows. See Figure 1.
LOW-SIDE DRIVER
The low-side driver is designed to drive a ground-referenced
N-channel MOSFET. The bias to the low-side driver is
internally connected to the VCC supply and PGND.
When the driver is enabled, the driver’s output is 180° out of
phase with the PWM input. When the ADP3120 is disabled,
the low-side gate is held low.
HIGH-SIDE DRIVER
The high-side driver is designed to drive a floating N-channel
MOSFET. The bias voltage for the high-side driver is developed
by an external bootstrap supply circuit, which is connected
between the BST and SW pins.
The bootstrap circuit comprises a diode, D1, and bootstrap
capacitor, C
side gate drive voltage and to limit the switch node slew rate
(called a Boot-Snap circuit—see the Application Information
section for more details). When the ADP3120 starts up, the SW
pin is at ground, so the bootstrap capacitor charges up to VCC
through D1. When the PWM input goes high, the high-side
driver begins to turn on the high-side MOSFET, Q1, by pulling
charge out of C
up to V
gate-to-source voltage to hold Q1 on. To complete the cycle, Q1
is switched off by pulling the gate down to the voltage at the SW
pin. When the low-side MOSFET, Q2, turns on, the SW pin is
pulled to ground. This allows the bootstrap capacitor to charge
up to VCC again.
The output of the high-side driver is in phase with the PWM
input. When the driver is disabled, the high-side gate is held low.
IN
, forcing the BST pin to V
BST1
. C
BST1
BST2
and C
and R
BST2
BST
. As Q1 turns on, the SW pin rises
are included to reduce the high-
IN
+ V
C(BST)
, which is enough
Rev. 0 | Page 9 of 16
OVERLAP PROTECTION CIRCUIT
The overlap protection circuit prevents both of the main power
switches, Q1 and Q2, from being on at the same time. This is
done to prevent shoot-through currents from flowing through
both power switches and the associated losses that can occur
during their on/off transitions. The overlap protection circuit
accomplishes this by adaptively controlling the delay from the
Q1 turn off to the Q2 turn on, and by internally setting the
delay from the Q2 turn off to the Q1 turn on.
To prevent the overlap of the gate drives during the Q1 turn off
and the Q2 turn on, the overlap circuit monitors the voltage at
the SW pin. When the PWM input signal goes low, Q1 begins
to turn off (after propagation delay). Before Q2 can turn on, the
overlap protection circuit makes sure that SW has first gone
high and then waits for the voltage at the SW pin to fall from
V
begins turn on. If the SW pin has not gone high first, the Q2
turn on is delayed by a fixed 150 ns. By waiting for the voltage
on the SW pin to reach 1 V or for the fixed delay time, the
overlap protection circuit ensures that Q1 is off before Q2 turns
on, regardless of variations in temperature, supply voltage, input
pulse width, gate charge, and drive current. If SW does not go
below 1 V after 190 ns, DRVL turns on. This can occur if the
current flowing in the output inductor is negative and is flowing
through the high-side MOSFET body diode.
IN
to 1 V. Once the voltage on the SW pin falls to 1 V, Q2
ADP3120

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