MSC8156 Freescale Semiconductor, Inc, MSC8156 Datasheet - Page 27

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MSC8156

Manufacturer Part Number
MSC8156
Description
Six-core Digital Signal Processor
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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2.5.1.3
Table 8
Note:
2.5.1.4
Table 9
Note:
2.5.2
The MSC8156 features an HSSI that includes two 4-channel SerDes ports used for high-speed serial interface applications (PCI
Express, Serial RapidIO interfaces, and SGMII). This section and its subsections describe the common portion of the SerDes
DC, including the DC requirements for the SerDes reference clocks and the SerDes data lane transmitter (Tx) and receiver (Rx)
reference circuits. The data lane circuit specifications are specific for each supported interface, and they have individual
subsections by protocol. The selection of individual data channel functionality is done via the Reset Configuration Word High
Register (RCWHR) SerDes Protocol selection fields (S1P and S2P). Specific AC electrical characteristics are defined in
Section 2.6.2, “HSSI AC Timing
2.5.2.1
The SerDes interface uses differential signaling to transfer data across the serial link. This section defines terms used in the
description and specification of differential signals.
one SerDes lane is used in the description.
Freescale Semiconductor
I/O capacitance: DQ, DQS, DQS
Delta I/O capacitance: DQ, DQS, DQS
Notes:
Current draw for MV
• DDR2 SDRAM
• DDR3 SDRAM
provides the DDR controller interface capacitance for DDR2 and DDR3 memory.
lists the current draw characteristics for
At recommended operating conditions (see
DDR3 memory.
Values when used at recommended operating conditions (see
1.
2.
High-Speed Serial Interface (HSSI) DC Electrical Characteristics
This parameter is sampled. V
V
This parameter is sampled. V
V
OUT
OUT
DDR2/DDR3 SDRAM Capacitance
DDR Reference Current Draw
Signal Term Definitions
Parameter
REFn
(peak-to-peak) = 0.2 V.
(peak-to-peak) = 0.175 V.
Parameter / Condition
MSC8156 Six-Core Digital Signal Processor Data Sheet, Rev. 1
Specifications.”
Table 9. Current Draw Characteristics for MV
Table 8. DDR2/DDR3 SDRAM Capacitance
DDDDR
DDDDR
Figure 4
= 1.8 V ± 0.1 V (for DDR2), f = 1 MHz, T
= 1.5 V ± 0.075 V (for DDR3), f = 1 MHz, T
MV
REF
Figure 4
shows the waveform for either a transmitter output (SR[1–2]_TX and
Symbol
Table
C
C
.
DIO
IO
3) with
shows how the signals are defined. For illustration purposes only,
V
DDDDR
Min
Table
6
Symbol
= 1.8 V for DDR2 memory or
I
MVREFn
3).
A
= 25°C, V
A
= 25°C, V
REF
Max
Min
0.5
8
OUT
OUT
= V
= V
Electrical Characteristics
DDDDR
DDDDR
Max
300
250
/2,
V
Unit
pF
pF
DDDDR
/2,
= 1.5 V for
Notes
Unit
1, 2
1, 2
μA
μA
27

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