BTA10-GP ST Microelectronics, Inc., BTA10-GP Datasheet - Page 4

• Manufacturer Part Number: BTA10-GP
• Description: Triacs
• Manufacturer: ST Microelectronics, Inc.

BTA/BTB10 Series
4/6
110
100
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
13
12
11
10
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
1E+0
Fig. 5:
number of cycles.
1E-1
1E-2
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
0
P (W)
1
1E-3
ITSM (A)
K=[Zth/Rth]
1
Zth(j-c)
1E-2
Surge peak on-state current versus
Repetitive
Tc=95°C
2
3
10
Non repetitive
Tj initial=25°C
Number of cycles
1E-1
IT(RMS) (A)
4
Zth(j-a)
tp (s)
5
1E+0
6
100
1E+1
7
t=20ms
One cycle
8
1E+2 5E+2
9
1000
10
12
11
10
100
Fig. 2: RMS on-state current versus case
temperature (full cycle).
Fig. 4:
values).
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
1000
9
8
7
6
5
4
3
2
1
0
10
100
1
0
10
0.5
IT(RMS) (A)
0.01
ITM (A)
ITSM (A), I²t (A²s)
Vto = 0.85 V
Rd = 40 mW
Tj max.
1.0
25
On-state characteristics
dI/dt limitation:
1.5
50A/µs
Tj=25°C
2.0
0.10
50
Tj max
2.5
VTM (V)
Tc(°C)
tp (ms)
3.0
75
1.00
3.5
4.0
100
BTA
(maximum
Tj initial=25°C
ITSM
I²t
BTB
4.5
10.00
125
5.0