BTA10-GP ST Microelectronics, Inc., BTA10-GP Datasheet - Page 2

• Manufacturer Part Number: BTA10-GP
• Description: Triacs
• Manufacturer: ST Microelectronics, Inc.

BTA/BTB10 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/6
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms
(dI/dt)c (2)
SNUBBERLESS™ (3 Quadrants)
STANDARD (4 Quadrants)
dV/dt (2)
dV/dt (2)
Symbol
Symbol
I
I
Symbol
V
GT
I
GT
I
V
R
V
V
V
H
V
H
I
I
TM
to
DRM
RRM
I
I
d
GD
GD
GT
GT
L
L
(2)
(2)
(1)
(1)
(2)
(2)
(2)
V
V
I
I
V
Without snubber
V
V
I
I
V
T
G
T
G
I
Threshold voltage
Dynamic resistance
V
D
D
D
D
D
D
TM
= 500 mA
= 500 mA
DRM
= 1.2 I
= 1.2 I
= 12 V
= V
= 67 % V
= 12 V
= V
= 67 %V
= 14 A
DRM
DRM
= V
GT
GT
RRM
Test Conditions
DRM
DRM
R
R
Test Conditions
R
R
L
L
L
tp = 380 µs
L
= 3.3 k
= 33
= 3.3 k
gate open Tj = 125°C
= 33
gate open Tj = 125°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
Test Conditions
Tj = 125°C
Quadrant
I - III - IV
I - II - III
Tj = 125°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 25°C
ALL
ALL
Quadrant
IV
II
I - II - III
I - II - III
I - II - III
I - III
II
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
200
25
50
25
40
80
CW
500
C
5
5.5
35
35
50
60
BTA/BTB10
BTA/BTB10
1.3
0.2
1.3
0.2
Value
1.55
0.85
1000
100
100
400
40
BW
5
1
9.0
50
50
50
10
50
50
70
80
B
A/ms
Unit
V/µs
V/µs
V/µs
Unit
mA
mA
mA
mA
mA
mA
Unit
V
V
V
V
m
mA
µA
V
V