BFR505T Philips Semiconductors (Acquired by NXP), BFR505T Datasheet - Page 4

• Manufacturer Part Number: BFR505T
• Description: BFR505T; NPN 9 GHZ Wideband Transistor;; Package: SOT416 (EMT3, SMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
2000 May 17
I
h
C
C
C
f
G
F
P
ITO
j
CBO
T
SYMBOL
S
FE
L1
= 25 C; unless otherwise specified.
c
e
re
NPN 9 GHz wideband transistor
UM
21
f
C
(2p-q)
G
UM
2
= 5 mA; V
UM
is the maximum unilateral power gain, assuming S
= 898 MHz and at f
=
10 log
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third-order intercept point
CE
= 6 V; R
--------------------------------------------------------- - dB
1
PARAMETER
–
S
11
L
(2q-p)
= 50 ; f = 900 MHz; T
S
2
21
1
2
= 904 MHz.
–
S
22
2
I
I
I
I
I
I
T
I
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
I
f = 900 MHz; T
note 2
E
C
E
C
C
C
C
C
C
amb
amb
s
s
s
f = 900 MHz
f = 2 GHz
= 0; V
= 5 mA; V
= i
= i
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
=
=
=
amb
e
c
= 25 C
= 25 C
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
= 25 C; f
C
C
C
CONDITIONS
4
= 6 V
= 6 V; f = 1 MHz
12
= 1.25 mA; V
= 5 mA; V
= 1.25 mA; V
amb
CB
EB
CE
CE
CE
CE
CE
is zero and
amb
amb
amb
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 6 V
= 6 V; f = 1 GHz;
= 6 V; T
= 6 V; f = 900 MHz;
= 6 V; R
= 25 C
p
= 25 C
= 25 C
= 25 C
= 900 MHz; f
CE
amb
L
= 50 ;
= 6 V;
CE
CE
= 25 C;
= 6 V;
= 6 V;
q
= 902 MHz; measured at
60
13
MIN.
120
0.4
0.4
0.3
9
17
10
14
1.2
1.6
1.9
4
10
TYP.
Product specification
BFR505T
50
250
1.7
2.1
MAX.
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT