BFR505T Philips Semiconductors (Acquired by NXP), BFR505T Datasheet - Page 2

• Manufacturer Part Number: BFR505T
• Description: BFR505T; NPN 9 GHZ Wideband Transistor;; Package: SOT416 (EMT3, SMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. T
2000 May 17
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
C
T
C
SYMBOL
SYMBOL
FE
stg
j
Low current consumption
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
CBO
CES
tot
CBO
CE
EBO
tot
NPN 9 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
PINNING
PIN
1
2
3
open emitter
R
T
I
I
T
I
T
I
f = 900 MHz; T
open emitter
R
open collector
T
C
C
C
C
base
emitter
collector
s
amb
amb
s
BE
BE
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 1.25 mA; V
= 0
= 0
75 C; note 1
75 C; note 1
= 25 C
= 25 C
DESCRIPTION
2
CONDITIONS
CE
CE
CE
CONDITIONS
amb
= 6 V; f = 900 MHz;
= 6 V; T
= 6 V; f = 1 GHz;
CE
= 6 V;
= 25 C
j
= 25 C
fpage
Marking code: N0.
60
MIN.
Top view
Fig.1 SOT416.
1
120
9
17
1.2
TYP.
MIN.
65
Product specification
3
BFR505T
20
15
18
150
250
1.7
20
15
2.5
18
150
+150
150
MAX.
MAX.
MBK090
2
V
V
mA
mW
GHz
dB
dB
V
V
V
mA
mW
UNIT
UNIT
C
C