SI9934BDY Vishay Siliconix, SI9934BDY Datasheet - Page 3

• Manufacturer Part Number: SI9934BDY
• Description: Dual P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72525
S-41578—Rev. C, 23-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 6.4 A
V
On-Resistance vs. Drain Current
= 6 V
GS
4
3
V
= 2.5 V
SD
Q
0.4
g
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
− Drain Current (A)
T
Gate Charge
J
8
6
0.6
= 150_C
0.8
12
9
T
V
J
GS
= 25_C
1.0
= 4.5 V
16
12
1.2
1.4
20
15
2000
1600
1200
0.10
0.08
0.06
0.04
0.02
0.00
800
400
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
C
I
D
= 6.4 A
rss
2
= 1.8 A
= 4.5 V
1
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
4
25
Capacitance
2
Vishay Siliconix
50
C
6
oss
C
I
iss
D
3
Si9934BDY
75
= 6.4 A
8
100
www.vishay.com
4
10
125
150
12
5
3