SI9802DY Vishay Siliconix, SI9802DY Datasheet - Page 3

• Manufacturer Part Number: SI9802DY
• Description: Dual N-Channel Reduced Qg/ Fast Switching MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 70625
S-51303—Rev. A, 19-Dec-96
0.30
0.25
0.20
0.15
0.10
0.05
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
25
20
15
10
5
0
0
0
0
0
0
V
I
D
DS
= 4.5 A
On-Resistance vs. Drain Current
1
= 10 V
V
2
5
DS
Q
Output Characteristics
V
g
– Drain-to-Source Voltage (V)
GS
I
D
– Total Gate Charge (nC)
2
= 5 thru 3.5 V
– Drain Current (A)
Gate Charge
10
4
3
V
GS
15
6
= 3 V
4
3 V
2.5 V
V
GS
20
8
2 V
= 4.5 V
5
1.5 V
10
25
6
1200
900
600
300
2.0
1.6
1.2
0.8
0.4
25
20
15
10
5
0
0
0
–50
0
0
On-Resistance vs. Junction Temperature
0.5
V
I
D
GS
= 4.5 A
V
V
4
= 4.5 V
DS
GS
C
T
1.0
Transfer Characteristics
rss
0
J
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
1.5
Capacitance
www.vishay.com FaxBack 408-970-5600
8
T
2.0
50
C
25 C
Vishay Siliconix
C
= –55 C
oss
12
2.5
Si9802DY
100
3.0
C
125 C
16
iss
3.5
150
4.0
20
3