SI9424BDY Vishay Siliconix, SI9424BDY Datasheet - Page 2

• Manufacturer Part Number: SI9424BDY
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si9424BDY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
V
a
- Drain-to-Source Voltage (V)
GS
= 4.5 thru 2 V
2
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
I
DS(on)
t
I
t
1.5 V
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
1 V
g
Q
t
SD
t
t
4
rr
fs
gs
gd
r
f
g
5
New Product
V
I
V
DS
D
DS
^ -1 A, V
= -6 V, V
I
V
F
V
= -16 V, V
V
V
V
V
DS
GS
= -2.3 A, di/dt = 100 A/ms
GS
I
DS
DS
V
S
V
V
DS
Test Condition
DD
DD
DS
v -5 V, V
= -2.3 A, V
= -4.5 V, I
= V
= -2.5 V, I
= -10 V, I
= -16 V, V
= 0 V, V
= -6 V, R
= -6 V, R
GEN
GS
GS
GS
, I
= -4.5 V, I
= -4.5 V, R
D
= 0 V, T
GS
GS
D
= -250 mA
D
D
GS
GS
L
L
= -7.7 A
= -6.6 A
= -7.1 A
= -4.5 V
= 6 W
= 6 W
= "9 V
= 0 V
= 0 V
J
D
30
24
18
12
= 55_C
G
6
0
= -7.1 A
0.0
= 6 W
V
GS
0.5
Transfer Characteristics
-0.45
Min
-30
- Gate-to-Source Voltage (V)
T
25_C
C
= 125_C
1.0
0.014
0.019
Typ
-0.7
130
3.5
5.8
25
24
30
40
70
50
S-21785—Rev. A, 07-Oct-02
Document Number: 72015
"100
Max
-0.85
0.025
0.033
-1.2
200
105
100
-55 _C
1.5
-1
-5
40
45
60
Unit
nA
m
mA
nC
ns
V
A
W
W
S
V
2.0