SM4M64DT-10 Enhanced Memory Systems, Inc., SM4M64DT-10 Datasheet - Page 7

• Manufacturer Part Number: SM4M64DT-10
• Description: 168-pin Enhanced SDRAM DIMM 32MB DIMM
• Manufacturer: Enhanced Memory Systems, Inc.

Preliminary Data Sheet
AC Characteristics (T
1.
2.
3.
4.
5.
Clock and Clock Enable Parameters
Notes:
1.
2.
3.
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: [phone];
Revision 3.1
Symbol
t
t
t
t
t
t
t
CKESP
t
t
t
t
CKEH
CKH2
CKH1
CKES
An initial pause of 200 s is required after power-up, then a Precharge All Banks command must be given followed by a minimum
of eight Auto (CBR) Refresh cycles before the Mode Register Set operation can begin.
AC timing tests have V
The transition time is measured between V
AC measurements assume t
In addition to meeting the transition rate specification, the clock and CKE must transition V
a monotonic manner.
CKL2
CKL1
Access time is measured at 1.4V (LVTTL). See AC Test Load.
Access time is based on a clock rise time of 1ns. If clock rise time is longer than 1ns, then (t
Assumes clock rise and fall times are equal to 1ns. If rise or fall time exceeds 1ns, other AC timing parameters must be compensated by an
additional [(t
CK2
CK1
AC2
AC1
t
T
Clock Cycle Time, CL = 2, 3
Clock Cycle Time, CL = 1
Clock Access Time, CL = 2, 3
Clock Access Time, CL = 1
Clock High Pulse Width, CL = 2, 3
Clock High Pulse Width, CL = 1
Clock Low Pulse Width, CL = 2, 3
Clock Low Pulse Width, CL = 1
Clock Enable Setup Time
Clock Enable Hold Time
CKE Setup Time (Power Down Mode)
Transition Time (Rise and Fall)
rise
Clock
Input
Output
+t
fall
)/2-1] ns.
IL
t
Parameter
SETUP
= 0.8V and V
A
T
= 0 C to 70 C)
= 1ns.
t
HOLD
t
LZ
http://www.edram.com
t
AC
IH
= 2.0V with the timing referenced to the V
IH
and V
IL
t
OH
(or between V
Min
7.5
2.8
2.8
t
V
15
T
5
5
2
1
2
TT
-
-
-
VIH
VTT
VIL
7.5
IH
and V
Max
4.5
12
4
-
-
-
-
-
-
-
-
-
Output
IL
The information contained herein is subject to change without notice.
).
rise
AC Output Load Circuit
TT
168-pin Enhanced SDRAM DIMM
Z
/2-0.5) ns must be added to the access time.
0
= 1.4V crossover point.
= 50 ohm
Min
3.5
3.5
2.5
2.5
10
20
1999 Enhanced Memory Systems. All rights reserved.
6
6
1
-
-
-
IH
and V
10
8MB, 16MB, 32MB DIMM
V
TT
IL
Max
(or between V
15
R
C
5
4
-
-
-
-
-
-
-
-
-
T
LOAD
= 50 ohm
= 50pF
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
IH
Page 7 of 13
and V
Notes
1, 2
1, 2
3
3
3
3
IL
) in