GP1600FSS12 Dynex Semiconductor, GP1600FSS12 Datasheet - Page 4

• Manufacturer Part Number: GP1600FSS12
• Description: Powerline N-channel Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1600FSS12
4/11
INDUCTIVE SWITCHING CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
T
T
case
Symbol
case
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
Q
Q
t
t
= 25˚C unless stated otherwise
t
OFF
t
OFF
ON
ON
r
r
f
= 125˚C unless stated otherwise.
f
rr
rr
rr
rr
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Diode reverse recovery charge
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery charge
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Parameter
R
R
G(ON)
G(ON)
dI
dI
V
V
F
F
/dt = 2000A/ s
/dt = 2000A/ s
Conditions
R
V
R
V
I
I
L ~ 100nH
L ~ 100nH
I
I
C
V
= R
C
V
= R
F
F
GE
= 50%V
GE
= 50%V
CE
CE
= 1600A
= 1600A
= 1600A
= 1600A
= 15V
= 15V
G(OFF)
G(OFF)
= 600
= 600
CES
= 3.3
CES
= 3.3
,
,
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1650
1600
1900
1750
Typ.
200
350
450
160
250
400
500
250
100
250
225
170
Max. Units
1800
1750
2100
2000
250
450
200
300
500
550
350
550
350
130
-
-
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
C
C
C
C