GP1600FSS12 Dynex Semiconductor, GP1600FSS12 Datasheet - Page 3

• Manufacturer Part Number: GP1600FSS12
• Description: Powerline N-channel Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
Symbol
case
V
V
CE(SAT)
I
I
C
GE(TH)
L
CES
I
GES
V
I
FM
= 25˚C unless stated otherwise.
ies
M
F
F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Gate leakage current
Diode maximum forward current
Input capacitance
Module inductance
Collector cut-off current
Diode forward current
Diode forward voltage
Gate threshold voltage
Collector-emitter saturation voltage
Parameter
V
V
V
V
I
V
I
DC
t
I
V
C
F
p
F
GE
CE
GE
GE
GE
GE
=1600A, T
= 1ms
= 120mA, V
=1600A
= 15V, I
= 0V, V
= 25V, V
= 0V, V
= 20V, V
= 15V, I
C
Conditions
CE
= 1600A, T
CE
C
case
GE
= V
=1600A
= V
CE
GE
= 0V, f = 1MHz
-
= 125˚C
CES
= 0V
= V
CES
, T
CE
case
case
= 125˚C
= 125˚C
Min.
4
-
-
-
-
-
-
-
-
-
-
-
Typ.
180
2.7
3.2
2.3
2.2
15
-
-
-
-
-
-
GP1600FSS12
Max.
1600
3200
7.5
3.5
4.0
2.5
2.4
75
8
2
-
-
Units
mA
mA
nH
nF
V
V
V
V
A
A
V
3/11
A