GP1201FSS18 Dynex Semiconductor, GP1201FSS18 Datasheet - Page 6

• Manufacturer Part Number: GP1201FSS18
• Description: Single Switch Low V Igbt Module
• Manufacturer: Dynex Semiconductor

GP1201FSS18
6/9
1800
1600
2400
2200
2000
1400
1200
1000
800
600
200
400
100
0.1
10
0
1
0
1
Fig. 7 Diode typical forward characteristics
0.5
Fig. 9 Transient thermal impedance
10
1.0
Foward voltage, V
Pulse width, t
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1.5
100
p
2.0
- (ms)
T
j
= 25˚C
F
- (V)
Transistor
2.5
1000
Diode
T
j
= 125˚C
3.0
10000
3.5
2500
2000
1000
3000
1500
500
0
0
T
V
R
case
ge
g(off)
Fig. 8 Reverse bias safe operating area
= ±15V
= 125˚C
= 2.2Ω
400
Collector-emitter voltage, V
800
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1200
ce
- (V)
1600
2000