GP1201FSS18 Dynex Semiconductor, GP1201FSS18 Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
GP1201FSS18
Manufacturer Part Number
GP1201FSS18
Description
Single Switch Low V Igbt Module
Manufacturer
Dynex Semiconductor
Datasheet
1.GP1201FSS18.pdf
(9 pages)
TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1800
1600
2400
2200
2000
1400
1200
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Fig. 5 Typical switching energy vs collector current
800
600
200
400
0
0
0
0
T
V
V
R
L = 50nH
Common emitter
T
case
GE
CE
G
case
= 2.2Ω
Fig. 3 Typical output characteristics
= 15V
= 900V
= 125˚C
= 25˚C
200
1.0
Collector-emitter voltage, V
Collector current, I
400
2.0
600
3.0
C
- (A)
800
V
ce
ge
- (V)
= 20/15/12/10V
4.0
1000
E
OFF
E
E
REC
ON
1200
5.0
1800
1600
2400
2200
2000
1400
1200
1000
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
800
600
200
400
Fig. 6 Typical switching energy vs gate resistance
0
0
0
0
T
V
V
I
L = 50nH
Common emitter
T
C
case
GE
CE
case
= 1200A
1
Fig. 4 Typical output characteristics
= 15V
= 900V
= 125˚C
= 125˚C
1.0
2
Collector-emitter voltage, V
Gate resistance, R
3
2.0
4
3.0
5
G
6
- (Ohms)
GP1201FSS18
4.0
V
ce
ge
7
- (V)
= 20/15/12/10V
8
5.0
E
E
E
9
REC
ON
OFF
10
6.0
5/9