GP1201FSS18 Dynex Semiconductor, GP1201FSS18 Datasheet - Page 5

• Manufacturer Part Number: GP1201FSS18
• Description: Single Switch Low V Igbt Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1800
1600
2400
2200
2000
1400
1200
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Fig. 5 Typical switching energy vs collector current
800
600
200
400
0
0
0
0
T
V
V
R
L = 50nH
Common emitter
T
case
GE
CE
G
case
= 2.2Ω
Fig. 3 Typical output characteristics
= 15V
= 900V
= 125˚C
= 25˚C
200
1.0
Collector-emitter voltage, V
Collector current, I
400
2.0
600
3.0
C
- (A)
800
V
ce
ge
- (V)
= 20/15/12/10V
4.0
1000
E
OFF
E
E
REC
ON
1200
5.0
1800
1600
2400
2200
2000
1400
1200
1000
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
800
600
200
400
Fig. 6 Typical switching energy vs gate resistance
0
0
0
0
T
V
V
I
L = 50nH
Common emitter
T
C
case
GE
CE
case
= 1200A
1
Fig. 4 Typical output characteristics
= 15V
= 900V
= 125˚C
= 125˚C
1.0
2
Collector-emitter voltage, V
Gate resistance, R
3
2.0
4
3.0
5
G
6
- (Ohms)
GP1201FSS18
4.0
V
ce
ge
7
- (V)
= 20/15/12/10V
8
5.0
E
E
E
9
REC
ON
OFF
10
6.0
5/9