GP1200ESM33 Dynex Semiconductor, GP1200ESM33 Datasheet - Page 8
![no-image](/images/no-image-200.jpg)
GP1200ESM33
Manufacturer Part Number
GP1200ESM33
Description
High Reliability Single Switch Igbt Module Advance Information
Manufacturer
Dynex Semiconductor
Datasheet
1.GP1200ESM33.pdf
(9 pages)
GP1200ESM33
ASSOCIATED PUBLICATIONS
Electrostatic handling precautions
An introduction to IGBTs
IGBT ratings and characteristics
Heatsink requirements for IGBT modules
Calculating the junction temperature of power semiconductors
Gate drive considerations to maximise IGBT efficiency
Parallel operation of IGBTs – punch through vs non-punch through characteristics
Guidance notes for formulating technical enquiries
Principle of rating parallel connected IGBT modules
Short circuit withstand capability in IGBTs
Driving high power IGBTs with Concept gate drivers
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
8/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Title
Application Note
Number
AN4502
AN4503
AN4504
AN4505
AN4506
AN4507
AN4508
AN4869
AN5000
AN5167
AN5190
www.dynexsemi.com