GP1200ESM33 Dynex Semiconductor, GP1200ESM33 Datasheet - Page 2

• Manufacturer Part Number: GP1200ESM33
• Description: High Reliability Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

GP1200ESM33
ABSOLUTE MAXIMUM RATINGS
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
THERMAL AND MECHANICAL RATINGS
case
2/9
Symbol
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
R
R
R
= 25˚C unless stated otherwise
V
V
I
P
V
T
C(PK)
th(c-h)
th(j-c)
th(j-c)
I
T
CES
GES
max
-
isol
C
stg
j
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
V
T
1ms, T
T
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
case
case
GE
= 0V
= 80˚C
= 25˚C, T
case
= 120˚C
j
= 150˚C
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Test Conditions
Test Conditions
-
-
www.dynexsemi.com
Min.
–40
-
-
-
-
-
-
-
-
Max.
3300
1200
2400
6000
Max.
14.7
16.3
125
125
125
8.5
10
20
4
5
2
˚C/kW
˚C/kW
˚C/kW
Units
Units
kW
Nm
Nm
Nm
˚C
˚C
˚C
V
V
A
A
V