SMBD914 Infineon Technologies AG, SMBD914 Datasheet - Page 2

• Manufacturer Part Number: SMBD914
• Description: Silicon Switching Diode
• Manufacturer: Infineon Technologies AG

Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
V
V
V
Forward voltage
I
I
I
I
I
AC Characteristics
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
(BR)
F
F
F
F
F
F
R
R
R
R
R
L
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 150 mA
= 10 mA, I
= 20 V
= 75 V
= 20 V, T
= 75 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA
A
A
R
= 150 °C
= 150 °C
= 10 mA, measured at I
F
D.U.T.
Oscillograph
A
EHN00019
= 25°C, unless otherwise specified
R
= 1mA ,
Pulse generator: t
Oscillograph: R = 50 , t
2
Symbol
V
I
V
C
t
R
rr
(BR)
F
T
R
p
i
min.
100
= 100ns, D = 0.05, t
= 50
SMBD914/MMBD914...
-
-
-
-
-
-
-
-
-
-
-
r
= 0.35ns, C
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
-
0.025
max.
1000
1200
1250
715
855
0.1
30
50
Mar-10-2004
-
2
4
r
1pF
= 0.6ns,
Unit
V
µA
mV
pF
ns