MID400-12A4 IXYS Corporation, MID400-12A4 Datasheet
MID400-12A4
Manufacturer Part Number
MID400-12A4
Description
1200V Igbt Module
Manufacturer
IXYS Corporation
Datasheet
1.MID400-12A4.pdf
(4 pages)
IGBT Module
phaseleg and chopper topolgies
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
© 2002 IXYS All rights reserved
IGBTs T1-T2
C25
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
thJH
Gon
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
with heatsink compound
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 300 A; V
= 10 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= 15 V; R
= 900 V; V
= V
= 0 V; V
= 25 V; V
CE
GE
= 600 V; I
CES
= ± 15 V; R
11
10
8
9
; V
GE
GE
GE
GE
GE
GE
T1
T2
GE
=
G
= 0 V;
= 15 V; T
= 0 V; f = 1 MHz
= V
MII
= 4.7
= 15 V; I
C
= 15 V; R
G
20 V
= 300 A
CE
= 4.7
VJ
= 125°C
D1
D2
; T
T
T
T
3
1
2
C
VJ
VJ
VJ
VJ
VJ
= 300 A
= 25°C
= 125°C
= 25°C
= 125°C
G
= 125°C
= 4.7 ; T
(T
11
10
VJ
= 25 C, unless otherwise specified)
T2
MID
VJ
= 125°C
D1
D12
MID 400-12E4
MDI 400-12E4
MII 400-12E4
min.
4.5
3
1
2
Characteristic Values
Maximum Ratings
2.25
0.15
150
680
typ.
2.2
2.6
0.8
3.5
8
9
60
50
36
30
17
1200
1700
V
420
300
450
CES
20
10
T1
max.
0.08 K/W
600
2.8
6.5
3.3 mA
MDI
K/W
D2
D11
mA
µs
mJ
mJ
µC
W
nA
nF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
3
1
2
I
V
V
Features
•
•
•
Applications
•
•
C25
NPT
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
HiPerFRED
- fast and soft reverse recovery
- low operating forward voltage
- low leakage current
Package
- low inductive current path
- screw connection to high current
- use of non interchangeable
- kelvin emitter terminal for easy drive
- isolated ceramic base plate
drives
- AC
- DC
power supplies
- rectifiers with power factor
correction
- UPS
CES
CE(sat) typ.
main terminals
possible
performance in resonant circuits
connectors for auxiliary terminals
and recuperation capability
3
IGBT
TM
= 420 A
= 1200 V
= 2.2 V
diodes
1 - 4
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MID400-12A4 Summary of contents
Page 1
... IGBT Module phaseleg and chopper topolgies MII IGBTs T1-T2 Symbol Conditions 25°C to 150°C CES VJ V GES 25°C C25 80°C C80 4 RBSOA, Clamped inductive load 100 µH CEK 900 ...
Page 2
Free wheeling diodes D1-D2 Symbol Conditions 25°C F25 80°C F80 C Symbol Conditions 300 225 A; di ...
Page 3
V =17V 25°C J 700 I C 500 300 100 Fig. 1 Typ. output characteristics 600 20V CE 500 I 400 C 300 200 100 ...
Page 4
600V ±15V GE 100 125° 100 200 300 Fig. 7 Typ. turn on energy ...