RC28F256 Intel Corporation, RC28F256 Datasheet - Page 32

• Manufacturer Part Number: RC28F256
• Description: Intel StrataFlash Embedded Memory
• Manufacturer: Intel Corporation

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1-Gbit P30 Family
6.2
April 2005
32
Notes:
1.
2.
3.
4.
5.
6.
7.
V
NOTES:
1.
2.
3.
V
V
Sym
I
Sym
I
V
V
PPW
LKOQ
V
PPLK
PPE
V
LKO
OH
OL
IH
IL
Table 12. DC Current Characteristics (Sheet 2 of 2)
Table 13. DC Voltage Characteristics
All currents are RMS unless noted. Typical values at typical V
I
Sampled, not 100% tested.
V
V
I
I
page
Synchronous read mode is not supported with TTL inputs.
V
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
V
V
CCS
CCES
CCW
CC
CC
IL
PP
PP
PP
PP
CC
CCQ
can undershoot to –0.4 V and V
≤ V
read + program current is the sum of V
read + erase current is the sum of V
, I
Program Current
Erase Current
Lock-Out Voltage
is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
Lock Voltage
45.
is specified with the device deselected. If device is read while in erase suspend, current is I
Parameter
CCE
Lock Voltage
PPLK
DC Voltage Characteristics
measured over typical or max times specified in
Parameter
inhibits erase and program operations. Do not use V
V
V
(V
CCQ
CCQ
Intel StrataFlash
CCQ
Min
1.0
0.9
0
-
-
CMOS Inputs
Order Number: 306666, Revision: 001
– 0.1
– 0.4
= 1.7 V - 3.6 V)
IH
can overshoot to V
1.7 V - 3.6 V)
0.05
0.05
Typ
8
8
(V
CC
CMOS
Inputs
V
Max
CCQ
0.4
0.1
0.4
CC
CCQ
read and V
-
-
-
Max
0.10
0.10
read and V
22
22
=
®
Embedded Memory (P30)
V
2.4 V - 3.6 V)
0.05
0.05
Typ
(V
CCQ
TTL Inputs
CC
8
8
(V
CCQ
Min
CCQ
2.0
1.0
0.9
CC
0
erase currents.
-
-
TTL Inputs
CCQ
– 0.1
Section 7.5, “Program and Erase Characteristics” on
+ 0.4 V for durations of 20 ns or less.
program currents.
CC
= 2.4 V - 3.6 V)
Max
0.10
0.10
=
22
22
, T
PPL
C
= +25 °C.
and V
V
Unit
mA
mA
Max
(1)
0.6
0.1
0.4
CCQ
-
-
-
PPH
V
V
V
V
PP
PP
PP
PP
outside their valid ranges.
Unit
= V
= V
= V
= V
V
V
V
V
V
V
V
Test Conditions
PPL,
PPH,
PPL,
PPH,
V
V
I
V
V
I
OL
OH
program in progress
erase in progress
program in progress
erase in progress
CC
CCQ
CC
CCQ
Test Condition
= 100 µA
= –100 µA
= V
= V
= V
= V
CC
CC
CCES
CCQ
CCQ
Min
Min
Min
Min
plus I
Datasheet
CCR
Notes
.
Notes
2
3