TC2015 Microchip Technology, TC2015 Datasheet - Page 3

• Manufacturer Part Number: TC2015
• Description: (TC2xxx) 50 mA / 100 mA / 150 mA CMOS LDOs with Shutdown and Reference Bypass
• Manufacturer: Microchip Technology

ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, V
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Power Supply
Rejection Ratio
Output Short Circuit
Current
Thermal Regulation
Output Noise
Response Time,
(Note 8)
(from Shutdown Mode)
SHDN Input
SHDN Input High
Threshold
SHDN Input Low
Threshold
Note 1: The minimum V
2003 Microchip Technology Inc.
Parameters
2: V
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
8: Time required for V
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
value at a V differential.
excluding load or line regulation effects. Specifications are for a current pulse equal to I
perature and the thermal resistance from junction-to-air (i.e. T
R
TCV
is the regulator output voltage setting. For example: V
OUT
=
--------------------------------------------------------------------------- -
V
IN
V
OUTMAX
I
PSRR
OUTSC
OUT
has to meet two conditions: V
Sym
OUT
V
eN
V
T
IH
IL
R
/ P
to reach 95% of V
V
–
OUT
D
V
OUTMIN
T
Min
60
—
—
—
—
—
—
10
6 –
R
(output voltage setting), after V
0.04
IN
Typ
160
200
55
60
—
—
IN
= V
= 2.7V and V
R
+ 1V, I
R
Max
300
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
—
—
—
—
—
15
L
A
= 100 µA, C
, T
IN
J
= V
,
TC2014/2015/2185
nV/ Hz I
JA
Units
%V
%V
R
µsec
V/W
mA
dB
).
+ V
IN
IN
OUT
SHDN
DROPOUT
= 3.3 µF, SHDN > V
F
V
Note 6, Note 7
470 pF from Bypass to GND
V
C
V
V
L
OUT
IN
IN
IN
IN
= I
is switched from 0 to V
1 kHz, Cbypass=0.01 µF
= 4V, I
= 2.5V to 6.0V
= 2.5V to 6.0V
= 1 µF, C
OUTMAX
.
= 0V
MAX
L
= 30 mA,
, F = 10 kHz
OUT
at V
Conditions
IN
= 10 µF
= 6V for T = 10 msec.
IH
, T
DS21662C-page 3
A
IN
= +25°C.
.